sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a 2001-07-13 1 toshiba bi ? directional triode thyristor silicon planar type sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a ac power control applications repetitive peak off ? state voltage : v drm = 400, 600v r.m.s on ? state current : i t (rms) = 8a high commutating (dv / dt) isolation voltage : v isol = 1 500v ac maximum ratings characteristic symbol rating unit sm8gz47 sm8gz47a 400 repetitive peak off ? state voltage sM8JZ47 sM8JZ47a v drm 600 v r.m.s on ? state current (full sine waveform tc = 83c) i t (rms) 8 a 80 (50hz) peak one cycle surge on-state current (non ? repetitive) i tsm 88 (60hz) a i 2 t limit value i 2 t 32 a 2 s critical rate of rise of on ? state current (note 1) di / dt 50 a / s peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature t j ? 40~125 c storage temperature range t stg ? 40~125 c isolation voltage (ac, t = 1min.) v isol 1500 v jedec D jeita D toshiba 13 ? 10h1a weight: 1.7g unit: mm note 1: di / dt test condition v drm = 0.5rated i tm 12a t gw 10 s t gr 250ns i gp = i gt 2.0
sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a 2001-07-13 2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit repetitive peak off ? state current i drm v drm = rated D D 20 a i t2 (+), gate (+) D D 1.5 ii t2 (+), gate ( ? ) D D 1.5 iii t2 ( ? ), gate ( ? ) D D 1.5 gate trigger voltage iv v gt v d = 12v r l = 20 ? t2 ( ? ), gate (+) D D D v i t2 (+), gate (+) D D 30 ii t2 (+), gate ( ? ) D D 30 iii t2 ( ? ), gate ( ? ) D D 30 sm8gz47 sM8JZ47 iv t2 ( ? ), gate (+) D D D i t2 (+), gate (+) D D 20 ii t2 (+), gate ( ? ) D D 20 iii t2 ( ? ), gate ( ? ) D D 20 gate trigger current sm8gz47a sM8JZ47a iv i gt v d = 12v r l = 20 ? t2 ( ? ), gate (+) D D D ma peak on ? state voltage v tm i tm = 12a D D 1.5 v gate non ? trigger voltage v gd v d = rated, tc = 125c 0.2 D D v holding current i h v d = 12v, i tm = 1a D D 50 ma thermal resistance r th (j ? c) junction to case, ac D D 3.6 c / w sm8gz47 sM8JZ47 D 300 D critical rate of rise of off ? state voltage sm8gz47a sM8JZ47a dv / dt v drm = rated, t j = 125c exponential rise D 200 D v / s sm8gz47 sM8JZ47 10 D D critical rate of rise of off ? state voltage at commutation sm8gz47a sM8JZ47a (dv / dt) c v drm = 400v, t j = 125c (di /dt) c = ? 4.5a / ms 4 D D v / s marking * number symbol mark * 1 toshiba product mark sm8gz47, sm8gz47a m8gz47 * 2 sM8JZ47, sM8JZ47a M8JZ47 * 3 type sm8gz47a, sM8JZ47a a * 4 example 8a : january 1998 8b : febrary 1998 8l : december 1998
sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a 2001-07-13 3
sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a 2001-07-13 4
sm8gz47,sM8JZ47,sm8gz47a,sM8JZ47a 2001-07-13 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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